A Comparative Evaluation of Wide-Bandgap Semiconductors for High-Performance Domestic Induction Heating

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dc.authoridozturk, metin/0000-0001-9369-8206
dc.authoridaslan, sezer/0009-0003-0540-5269
dc.authoridaltintas, nihan/0000-0002-6567-7675
dc.contributor.authorAslan, Sezer
dc.contributor.authorÖztürk, Metin
dc.contributor.authorAltıntaş, Nihan
dc.date.accessioned2025-03-26T17:34:46Z
dc.date.available2025-03-26T17:34:46Z
dc.date.issued2023
dc.departmentİstanbul Esenyurt Üniversitesi, Fakülteler, Mühendislik ve Mimarlık Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü
dc.description.abstractThis paper presents a comparative evaluation of wide-bandgap power semiconductor devices for domestic induction heating application, which is currently a serious alternative to traditional heating techniques. In the induction heating system, the power transferred to the output depends on the equivalent resistance of the load, and the resistance depends on the operating frequency. Due to the switching characteristics of wide-bandgap power semiconductor devices, an induction heating system can be operated at higher operating frequencies. In this study, SiC and Si semiconductor devices are used in the comparison. These devices are compared according to different evaluation issues such as the turn-off energy losses, turn-off times, current fall time, the power losses of the internal diodes, and the conduction voltage drops issues. To perform the proposed evaluation, the series-resonant half-bridge inverter, which is frequently used in state-of-the-art induction heating systems, has been selected. The device suitability in an induction heating system is analyzed with the help of a test circuit. A comparison is made in terms of criteria determined by using the selected switches in the experimental circuit, which is operated in the 200 W to 1800 W power range and 45 kHz to 125 kHz switching frequency range. System efficiency is measured as 97.3% when Si IGBT is used. In the case of using SiC cascode JFET, the efficiency of the system is increased up to 99%.
dc.description.sponsorshipScientific and Technological Research Council of Turkey - Mamur Technology Systems Research and Development Center [3210188]
dc.description.sponsorshipThis research received no external funding.
dc.identifier.doi10.3390/en16103987
dc.identifier.issn1996-1073
dc.identifier.issue10
dc.identifier.scopus2-s2.0-85160675947
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.3390/en16103987
dc.identifier.urihttps://hdl.handle.net/20.500.14704/894
dc.identifier.volume16
dc.identifier.wosWOS:000996697600001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherMDPI
dc.relation.ispartofEnergies
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20250326
dc.subjectinduction cooking hobs; resonant half bridge; SiC cascode JFET; silicon carbide; wide bandgap
dc.titleA Comparative Evaluation of Wide-Bandgap Semiconductors for High-Performance Domestic Induction Heating
dc.typeArticle

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